近三年代表性成果
[1] Atomic-level polarization reversal in sliding ferroelectric semiconductors. Sui F. #, Li H, Qi R.*, Jin M. *, Lv Z., Wu M., Zheng Y., Liu B., Ge R., Wu Y.-N*., Huang R., Yue F. *, Chu J., Duan C. Nat. Commun. 15, 3799 (2024) (High cited paper, WOS). (共同通讯作者)
[2] Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor. Sui F. #, Jin M., Zhang Y.,Qi R.*, Wu Y.-N., Huang R., Yue F. *, Chu J., Nat. Commun.14, 36 (2023) (High cited paper, WOS). (共同通讯作者)
[3] Unconventional antiferroelectricity in centrosymmetric van der Waals group-IV monochalcogenides, Sui F. #, Yu Y. #，Chen J. #,Qi R.*, Ge R., Zheng Y., Liu B., Jin R., Gong S., Yue, F. *, Chu, J., Nat. Commun. 16, 1810 (2025). (共同通讯作者)
[4] Enhanced bulk photovoltaic effect of single-domain freestanding BiFeO3 membranes. Lin J. #, Wang H. #, Zheng Y., Kan Y., Chen R., Long M., Chen Y., Zhou Z., Qi R. *, Yue F., Duan C., Chu J., Sun L. *Adv. Mater.2414113 (2024). (共同通讯作者)
[5] Intrinsic sliding ferroelectricity and high-quality superlinear emission in van der Waals γ-InSe semiconductor. Sui F.#, Jin R, Yu Y. #, Jia S., Liu B., Qi R.*, Jin M., Liu X., Ge R., Zheng Y., Dai J., Yue, F.*, Chu, J., Adv. Funct. Mater.2508213 (2025).(共同通讯作者)
[6] Niobium-doped layered cathode material for high-power and low-temperature sodium-ion batteries. Shi Q. #, Qi R.#, Feng X. #, Wang J. #, Li Y., Yao Z., Wang X., Li Q., Lu X., Zhang J., Zhao Y. *, Nat. Commun.13 (1), 3205 (2022). (High cited paper, WOS) (共同第一作者)
[7] Microstructurally tailored thin β-Ag2Se films toward commercial flexible thermoelectrics. Lei Y. # *,Qi R. #, Chen M., Chen H., Xing C., Sui F., Gu L., He W., Zhang Y., Baba T., Lin H., Mori T., Koumoto K. *, Lin Y., Zheng Z. *, Adv. Mater. 34 (7), 2104786(2022). (共同第一作者)
[8] Chiral phonon, valley polarization and inter-/intra-valley scattering in van der Waals ReSe2 semiconductor. Yang S. #, Yu Y, Sui F., Ge R., Jin R., Liu B., Chen Y., Qi R. *, Yue F. *. ACS Nano2401770 (2024). (共同通讯作者)
[9] Phase tailoring of In2Se3 toward van der Waals vertical heterostructures via selenization of γ-InSe semiconductor. Liu B. #, Ge R., Yue F. *, Zheng Y., Sui F., Yu Y., Huang R. *, Qi R. *, Duan C.Small Methods 2401770 (2025). (共同通讯作者)
[10] In situ formation of SnSe2/SnSe vertical heterostructures toward polarization selectable band alignments. Ge R. #, Liu B., Sui F., Zheng Y., Yu Y., Wang K., Qi R. *, Huang R. *, Yue F. *, Chu J., Duan C., Small 20, 2404965 (2024).(共同通讯作者)
授权国家发明专利
[1] 国家授权发明专利：一种调控二维层状范德华材料结构和缺陷的方法及其应用，隋峰锐、齐瑞娟、金敏、吕志伟、吴宇宁、越方禹。专利号：ZL202211729460.9
[2] 国家授权发明专利：一种二维层状材料样品电学测试微电极的制备方法, 齐瑞娟、成岩、黄荣。专利号：ZL201910298039.9
[3] 国家授权发明专利：一种微电极沉积掩膜的制备方法，齐瑞娟、彭晖、成岩、黄荣。专利号：ZL201910297991.7
[4] 国家授权发明专利：用于透射电镜原位通电芯片的拥有纳米级间距小电极的材料测试单元制备方法，成岩、黄荣、齐瑞娟。专利号：ZL201810203499.4
[5] 国家授权发明专利：一种多层存储结构透射电子显微镜原位电学测试单元制备方法，成岩、郑勇辉、齐瑞娟、黄荣、张媛媛。专利号：ZL201911006116.5。
[6] 国家授权发明专利：一种硒纳米线光电检测器及制备方法，雷伟斌、齐瑞娟、成岩、张媛媛、黄荣。专利号：ZL2020 1 0118719.0。
